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DMP1011LFVQ

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DMP1011LFVQ Image

The DMP1011LFVQ from Diodes Incorporated is a MOSFET with Continous Drain Current -13 A, Drain Source Resistance 9.8 to 18.6 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage - 6 V, Gate Source Threshold Voltage -1.2 to -0.6 V. Tags: Surface Mount. More details for DMP1011LFVQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP1011LFVQ
  • Manufacturer
    Diodes Incorporated
  • Description
    12 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -13 A
  • Drain Source Resistance
    9.8 to 18.6 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    - 6 V
  • Gate Source Threshold Voltage
    -1.2 to -0.6 V
  • Gate Charge
    7.1 nC
  • Power Dissipation
    2.16 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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