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DMP10H088SPS

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DMP10H088SPS Image

The DMP10H088SPS from Diodes Incorporated is a MOSFET with Continous Drain Current -20 A, Drain Source Resistance 59 to 89 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for DMP10H088SPS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP10H088SPS
  • Manufacturer
    Diodes Incorporated
  • Description
    100 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -20 A
  • Drain Source Resistance
    59 to 89 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    27.7 nC
  • Power Dissipation
    70 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Active Clamp Switch, Load Switch

Technical Documents
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