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DMP10H400SEQ

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The DMP10H400SEQ from Diodes Incorporated is a MOSFET with Continous Drain Current -2.3 A, Drain Source Resistance 203 to 300 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for DMP10H400SEQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP10H400SEQ
  • Manufacturer
    Diodes Incorporated
  • Description
    100 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.3 A
  • Drain Source Resistance
    203 to 300 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    8.4 nC
  • Power Dissipation
    13.7 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT223
  • Applications
    Engine Management Systems, Body Control Electronics, DC-DC Converters

Technical Documents
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