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DMP10H4D2S

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DMP10H4D2S Image

The DMP10H4D2S from Diodes Incorporated is a MOSFET with Continous Drain Current -0.27 A, Drain Source Resistance 2800 to 5000 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for DMP10H4D2S can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP10H4D2S
  • Manufacturer
    Diodes Incorporated
  • Description
    100 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.27 A
  • Drain Source Resistance
    2800 to 5000 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    1.8 nC
  • Power Dissipation
    0.44 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    DC-DC Converters, Power Management Functions, Battery Operated Systems and Solid-State Relays, Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Technical Documents
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