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DMP1100UCB4

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The DMP1100UCB4 from Diodes Incorporated is a MOSFET with Continous Drain Current -3.2 A, Drain Source Resistance 65 to 400 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.8 to -0.35 V. Tags: Surface Mount. More details for DMP1100UCB4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP1100UCB4
  • Manufacturer
    Diodes Incorporated
  • Description
    12 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.2 A
  • Drain Source Resistance
    65 to 400 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.8 to -0.35 V
  • Gate Charge
    9 nC
  • Power Dissipation
    1.1 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X2-WLB0808-4
  • Applications
    Portable Applications, Load Switch, Power Management Functions

Technical Documents
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