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DMP2012SN

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The DMP2012SN from Diodes Incorporated is a MOSFET with Continous Drain Current -0.9 A, Drain Source Resistance 230 to 500 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.2 to -0.5 V. Tags: Surface Mount. More details for DMP2012SN can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP2012SN
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.9 A
  • Drain Source Resistance
    230 to 500 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.2 to -0.5 V
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC59
  • Applications
    DC-DC Converters, Power Management Functions

Technical Documents
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