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DMP2160UFDBQ

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DMP2160UFDBQ Image

The DMP2160UFDBQ from Diodes Incorporated is a MOSFET with Continous Drain Current -3.8 A, Drain Source Resistance 54 to 86 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -0.9 to -0.45 V. Tags: Surface Mount. More details for DMP2160UFDBQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP2160UFDBQ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -3.8 A
  • Drain Source Resistance
    54 to 86 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -0.9 to -0.45 V
  • Gate Charge
    6.5 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    Load Switch, Portable Applications, Power Management Functions

Technical Documents
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