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DMP26M1UPS

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The DMP26M1UPS from Diodes Incorporated is a MOSFET with Continous Drain Current -90 A, Drain Source Resistance 5000 to 8000 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for DMP26M1UPS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP26M1UPS
  • Manufacturer
    Diodes Incorporated
  • Description
    -10 to 10 V, 75 to 164 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -90 A
  • Drain Source Resistance
    5000 to 8000 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    75 to 164 nC
  • Power Dissipation
    2.76 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Load Switch, Power Management Functions

Technical Documents
View details on the manufacturer's website
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