DMP3056L

Note : Your request will be directed to Diodes Incorporated.

DMP3056L Image

The DMP3056L from Diodes Incorporated is a MOSFET with Continous Drain Current -4.3 A, Drain Source Resistance 35 to 70 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -2.1 to -1 V. Tags: Surface Mount. More details for DMP3056L can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP3056L
  • Manufacturer
    Diodes Incorporated
  • Description
    -25 to 25 V, 5.8 to 11.8 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.3 A
  • Drain Source Resistance
    35 to 70 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -2.1 to -1 V
  • Gate Charge
    5.8 to 11.8 nC
  • Power Dissipation
    1.38 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23

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