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DMP3056LSSQ

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The DMP3056LSSQ from Diodes Incorporated is a MOSFET with Continous Drain Current -4.9 A, Drain Source Resistance 25 to 65 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.1 to -1 V. Tags: Surface Mount. More details for DMP3056LSSQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP3056LSSQ
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 8.2 to 17.3 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.9 A
  • Drain Source Resistance
    25 to 65 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.1 to -1 V
  • Gate Charge
    8.2 to 17.3 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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