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DMP3130LQ

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The DMP3130LQ from Diodes Incorporated is a MOSFET with Continous Drain Current -3.5 A, Drain Source Resistance 59 to 150 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.3 to -0.6 V. Tags: Surface Mount. More details for DMP3130LQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP3130LQ
  • Manufacturer
    Diodes Incorporated
  • Description
    -12 to 12 V, 5.9 to 12 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.5 A
  • Drain Source Resistance
    59 to 150 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.3 to -0.6 V
  • Gate Charge
    5.9 to 12 nC
  • Power Dissipation
    1.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    DC-DC Converters, Power Management Functions, Analog Switch

Technical Documents
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