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DMT10H003SPSW

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DMT10H003SPSW Image

The DMT10H003SPSW from Diodes Incorporated is a MOSFET with Continous Drain Current 152 A, Drain Source Resistance 2.2 to 5 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for DMT10H003SPSW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT10H003SPSW
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 85 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    152 A
  • Drain Source Resistance
    2.2 to 5 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    85 nC
  • Power Dissipation
    2.2 to 139 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Engine Management Systems, Body Control Electronics, DC-DC Converters

Technical Documents
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