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DMT10H009LSS

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The DMT10H009LSS from Diodes Incorporated is a MOSFET with Continous Drain Current 13 to 48 A, Drain Source Resistance 7.1 to 13.8 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Surface Mount. More details for DMT10H009LSS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT10H009LSS
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 20.2 to 40.2 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13 to 48 A
  • Drain Source Resistance
    7.1 to 13.8 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    20.2 to 40.2 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    High Frequency Switching, Synchronous Rectification, DC-DC Converters

Technical Documents
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