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DMT10H010LSS

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DMT10H010LSS Image

The DMT10H010LSS from Diodes Incorporated is a MOSFET with Continous Drain Current 11.5 to 29.5 A, Drain Source Resistance 8 to 14.5 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.8 V. Tags: Surface Mount. More details for DMT10H010LSS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT10H010LSS
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 58.4 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11.5 to 29.5 A
  • Drain Source Resistance
    8 to 14.5 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.8 V
  • Gate Charge
    58.4 nC
  • Power Dissipation
    1.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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