The DMT10H025SSS from Diodes Incorporated is a MOSFET with Continous Drain Current 7.4 A, Drain Source Resistance 17 to 30 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for DMT10H025SSS can be seen below.