1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMT10H072LFDFQ

DMT10H072LFDFQ

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMT10H072LFDFQ Image

The DMT10H072LFDFQ from Diodes Incorporated is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 47 to 110 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMT10H072LFDFQ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMT10H072LFDFQ
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 2.5 to 4.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    47 to 110 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    2.5 to 4.5 nC
  • Power Dissipation
    1.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    Power Management Functions, Battery Operated Systems and Solid-State Relays, Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products