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DMT10H072LFV

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DMT10H072LFV Image

The DMT10H072LFV from Diodes Incorporated is a MOSFET with Continous Drain Current 4.7 to 20 A, Drain Source Resistance 50.6 to 109 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.8 V. Tags: Surface Mount. More details for DMT10H072LFV can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT10H072LFV
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 2.5 to 4.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.7 to 20 A
  • Drain Source Resistance
    50.6 to 109 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.8 V
  • Gate Charge
    2.5 to 4.5 nC
  • Power Dissipation
    2 to 37.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Power Management Functions, Battery Operated Systems and Solid-State Relays, Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Technical Documents
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