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DMT15H053SSS

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The DMT15H053SSS from Diodes Incorporated is a MOSFET with Continous Drain Current 5.2 to 15 A, Drain Source Resistance 41 to 53 Milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for DMT15H053SSS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT15H053SSS
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 11.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.2 to 15 A
  • Drain Source Resistance
    41 to 53 Milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    11.5 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    High Frequency Switching, Synchronous Rectification, DC-DC Converters

Technical Documents
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