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DMT2004UFDF

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The DMT2004UFDF from Diodes Incorporated is a MOSFET with Continous Drain Current 14.1 A, Drain Source Resistance 4.8 to 12.5 milliohm, Drain Source Breakdown Voltage 24 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.55 to 1.45 V. Tags: Surface Mount. More details for DMT2004UFDF can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT2004UFDF
  • Manufacturer
    Diodes Incorporated
  • Description
    24 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14.1 A
  • Drain Source Resistance
    4.8 to 12.5 milliohm
  • Drain Source Breakdown Voltage
    24 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.55 to 1.45 V
  • Gate Charge
    29.6 nC
  • Power Dissipation
    1.8 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    Battery Management Application, Power Management Functions, DC-DC Converters

Technical Documents
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