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DMT3009UFVW

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The DMT3009UFVW from Diodes Incorporated is a MOSFET with Continous Drain Current 10.6 A, Drain Source Resistance 8.6 to 13 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.8 V. Tags: Surface Mount. More details for DMT3009UFVW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT3009UFVW
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10.6 A
  • Drain Source Resistance
    8.6 to 13 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.8 V
  • Gate Charge
    14.6 nC
  • Power Dissipation
    2.6 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
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