1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMT5012LFVW

DMT5012LFVW

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMT5012LFVW Image

The DMT5012LFVW from Diodes Incorporated is a MOSFET with Continous Drain Current 11.7 A, Drain Source Resistance 9.2 to 20 milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.3 V. Tags: Surface Mount. More details for DMT5012LFVW can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMT5012LFVW
  • Manufacturer
    Diodes Incorporated
  • Description
    50 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11.7 A
  • Drain Source Resistance
    9.2 to 20 milliohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.3 V
  • Gate Charge
    10.5 to 17.6 nC
  • Power Dissipation
    51.4 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products