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DMT6009LCT

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The DMT6009LCT from Diodes Incorporated is a MOSFET with Continous Drain Current 37.2 A, Drain Source Resistance 9.4 to 14.5 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 0.7 to 2 V. Tags: Through Hole. More details for DMT6009LCT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT6009LCT
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    37.2 A
  • Drain Source Resistance
    9.4 to 14.5 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    0.7 to 2 V
  • Gate Charge
    15.6 to 33.5 nC
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO220-3
  • Applications
    DC-DC Converters, Power Management Functions, Load Switch

Technical Documents
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