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DMT6010LFG

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DMT6010LFG Image

The DMT6010LFG from Diodes Incorporated is a MOSFET with Continous Drain Current 13 A, Drain Source Resistance 6 to 11.5 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 2 V. Tags: Surface Mount. More details for DMT6010LFG can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT6010LFG
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13 A
  • Drain Source Resistance
    6 to 11.5 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 2 V
  • Gate Charge
    19.3 to 41.3 nC
  • Power Dissipation
    41 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Synchronous Rectification, Motor Control, DC-DC Converters, Power Management, Backlight

Technical Documents
View details on the manufacturer's website
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