1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMT6011LPDW

DMT6011LPDW

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMT6011LPDW Image

The DMT6011LPDW from Diodes Incorporated is a MOSFET with Continous Drain Current 10.3 A, Drain Source Resistance 10.8 to 22 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.5 V. Tags: Surface Mount. More details for DMT6011LPDW can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMT6011LPDW
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    10.3 A
  • Drain Source Resistance
    10.8 to 22 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.5 V
  • Gate Charge
    11.8 to 22.2 nC
  • Power Dissipation
    37.9 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Wireless Charging, DC-DC Converters, Power Management

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products