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DMT6017LDV

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The DMT6017LDV from Diodes Incorporated is a MOSFET with Continous Drain Current 25.3 A, Drain Source Resistance 17.5 to 29 milliohm, Drain Source Breakdown Voltage 65 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1 to 2.3 V. Tags: Surface Mount. More details for DMT6017LDV can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT6017LDV
  • Manufacturer
    Diodes Incorporated
  • Description
    65 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    25.3 A
  • Drain Source Resistance
    17.5 to 29 milliohm
  • Drain Source Breakdown Voltage
    65 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1 to 2.3 V
  • Gate Charge
    7.5 to 15.3 nC
  • Power Dissipation
    2.34 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Wireless Charging, DC-DC Converters, Power Management

Technical Documents
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