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DMT6018LDR

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DMT6018LDR Image

The DMT6018LDR from Diodes Incorporated is a MOSFET with Continous Drain Current 8.8 A, Drain Source Resistance 13 to 26 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMT6018LDR can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT6018LDR
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    8.8 A
  • Drain Source Resistance
    13 to 26 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    6.2 to 13.9 nC
  • Power Dissipation
    1.9 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    V-DFN3030-8
  • Applications
    Power Management Functions, Analog Switch

Technical Documents
View details on the manufacturer's website
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