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DMT64M2LPSW

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DMT64M2LPSW Image

The DMT64M2LPSW from Diodes Incorporated is a MOSFET with Continous Drain Current 20.7 A, Drain Source Resistance 3.3 to 6.4 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for DMT64M2LPSW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT64M2LPSW
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20.7 A
  • Drain Source Resistance
    3.3 to 6.4 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    24.1 to 46.7 nC
  • Power Dissipation
    83.3 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    High Frequency Switching, Synchronized Rectification, DC-DC Converters

Technical Documents
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