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DMT67M8LPSW

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DMT67M8LPSW Image

The DMT67M8LPSW from Diodes Incorporated is a MOSFET with Continous Drain Current 17.3 A, Drain Source Resistance 4.4 to 8.5 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for DMT67M8LPSW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT67M8LPSW
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    17.3 A
  • Drain Source Resistance
    4.4 to 8.5 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    20 to 37.5 nC
  • Power Dissipation
    62.5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Synchronous Rectifier, Power Management Functions, DC-DC Converters

Technical Documents
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