DMT8008LPS

Note : Your request will be directed to Diodes Incorporated.

DMT8008LPS Image

The DMT8008LPS from Diodes Incorporated is a MOSFET with Continous Drain Current 83 A, Drain Source Resistance 5.6 to 11 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.8 V. Tags: Surface Mount. More details for DMT8008LPS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT8008LPS
  • Manufacturer
    Diodes Incorporated
  • Description
    80 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    83 A
  • Drain Source Resistance
    5.6 to 11 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.8 V
  • Gate Charge
    21.7 to 41.2 nC
  • Power Dissipation
    1.3 to 83 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    DC-DC Converters, Load Switch

Technical Documents

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