1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMT8008SCT

DMT8008SCT

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMT8008SCT Image

The DMT8008SCT from Diodes Incorporated is a MOSFET with Continous Drain Current 111 A, Drain Source Resistance 5.8 to 7.5 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for DMT8008SCT can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMT8008SCT
  • Manufacturer
    Diodes Incorporated
  • Description
    80 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    111 A
  • Drain Source Resistance
    5.8 to 7.5 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    23 to 34 nC
  • Power Dissipation
    2.4 to 167 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO220AB
  • Applications
    Motor Control, Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products