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DMT8008SPS

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DMT8008SPS Image

The DMT8008SPS from Diodes Incorporated is a MOSFET with Continous Drain Current 83 A, Drain Source Resistance 6.5 to 11 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for DMT8008SPS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT8008SPS
  • Manufacturer
    Diodes Incorporated
  • Description
    80 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    83 A
  • Drain Source Resistance
    6.5 to 11 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    23 to 34 nC
  • Power Dissipation
    1.3 to 83 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    DC-DC Converters, Load Switch

Technical Documents
View details on the manufacturer's website
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