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DMT8012LSS

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The DMT8012LSS from Diodes Incorporated is a MOSFET with Continous Drain Current 7.8 to 11.6 A, Drain Source Resistance 12.7 to 20 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMT8012LSS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT8012LSS
  • Manufacturer
    Diodes Incorporated
  • Description
    80 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.8 to 11.6 A
  • Drain Source Resistance
    12.7 to 20 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    15 to 34 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Notebook Battery Power Management, Loadswitches, Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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