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DMTH10H010LCT

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DMTH10H010LCT Image

The DMTH10H010LCT from Diodes Incorporated is a MOSFET with Continous Drain Current 108 A, Drain Source Resistance 6.9 to 9.5 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 3.5 V. Tags: Through Hole. More details for DMTH10H010LCT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMTH10H010LCT
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 58.4 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    108 A
  • Drain Source Resistance
    6.9 to 9.5 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 3.5 V
  • Gate Charge
    58.4 nC
  • Power Dissipation
    2.4 to 166 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO220-3
  • Applications
    Synchronous Rectifier, Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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