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DMTH10H010LCTB

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The DMTH10H010LCTB from Diodes Incorporated is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 8.7 to 17 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 3.5 V. Tags: Surface Mount. More details for DMTH10H010LCTB can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMTH10H010LCTB
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 53.7 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    8.7 to 17 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 3.5 V
  • Gate Charge
    53.7 nC
  • Power Dissipation
    3.9 to 125 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO263AB (D2PAK)
  • Applications
    Synchronous Rectification, Inverter, DC-DC Converters

Technical Documents
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