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DMTH10H1M7STLWQ

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DMTH10H1M7STLWQ Image

The DMTH10H1M7STLWQ from Diodes Incorporated is a MOSFET with Continous Drain Current 250 A, Drain Source Resistance 1.4 to 2 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for DMTH10H1M7STLWQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMTH10H1M7STLWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 147 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    250 A
  • Drain Source Resistance
    1.4 to 2 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    147 nC
  • Power Dissipation
    6 to 250 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI1012-8
  • Applications
    Motor Control, DC-DC Converters, Power Management

Technical Documents
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