DMTH10H4M5LPS

Note : Your request will be directed to Diodes Incorporated.

DMTH10H4M5LPS Image

The DMTH10H4M5LPS from Diodes Incorporated is a MOSFET with Continous Drain Current 20 to 100 A, Drain Source Resistance 3.5 to 6.2 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Surface Mount. More details for DMTH10H4M5LPS can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMTH10H4M5LPS
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 80 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 to 100 A
  • Drain Source Resistance
    3.5 to 6.2 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    80 nC
  • Power Dissipation
    2.7 to 136 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Motor Control, DC-DC Converters, Power Management

Technical Documents

Latest MOSFETs

View more products