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DMTH4014LPDQ

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DMTH4014LPDQ Image

The DMTH4014LPDQ from Diodes Incorporated is a MOSFET with Continous Drain Current 10.6 to 43.6 A, Drain Source Resistance 11.8 to 25 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMTH4014LPDQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMTH4014LPDQ
  • Manufacturer
    Diodes Incorporated
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    10.6 to 43.6 A
  • Drain Source Resistance
    11.8 to 25 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    5.2 to 10.2 nC
  • Power Dissipation
    2.41 to 42.8 W
  • Temperature operating range
    -55 to 175 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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