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DMTH43M8LK3Q

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DMTH43M8LK3Q Image

The DMTH43M8LK3Q from Diodes Incorporated is a MOSFET with Continous Drain Current 17.6 to 100 A, Drain Source Resistance 2.9 to 5.2 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for DMTH43M8LK3Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMTH43M8LK3Q
  • Manufacturer
    Diodes Incorporated
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    17.6 to 100 A
  • Drain Source Resistance
    2.9 to 5.2 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    17.6 to 38.5 nC
  • Power Dissipation
    3.1 to 88 W
  • Temperature operating range
    -55 to 175 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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