DMTH48M3SFVWQ

Note : Your request will be directed to Diodes Incorporated.

DMTH48M3SFVWQ Image

The DMTH48M3SFVWQ from Diodes Incorporated is a MOSFET with Continous Drain Current 14.6 to 52.4 A, Drain Source Resistance 6.9 to 8.9 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for DMTH48M3SFVWQ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMTH48M3SFVWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14.6 to 52.4 A
  • Drain Source Resistance
    6.9 to 8.9 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    12.1 nC
  • Power Dissipation
    2.82 to 36.6 W
  • Temperature operating range
    -55 to 175 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8 (SWP)
  • Applications
    Motor Control, Power Management Functions, DC-DC Converters

Technical Documents

Latest MOSFETs

View more products