The DMTH4M70SPGWQ from Diodes Incorporated is an Automotive Qualified N-Channel Enhancement Mode MOSFET. This power MOSFET has a gate-source voltage of 2 V and a gate threshold voltage of over 2 V. It has a drain-source breakdown voltage of more than 40 V and a drain-source on-resistance of 0.54 mΩ. This MOSFET has a continuous drain current of 460 A and a total power dissipation of up to 5.6 W. It provides a high conversion efficiency and has a low drain-source on-resistance that minimizes power losses. This AEC-Q101 qualified MOSFET consists of a wettable flank to improve optical inspection and offers a 100% unclamped inductive switching (UIS) test that ensures high reliability and robustness. 

 This RoHS-compliant MOSFET is available in a surface-mount package that measures 7.90 x 7.80 mm and is ideal for engine management systems, body control electronics, and DC-DC converter applications.