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DMTH6010LPDQ

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DMTH6010LPDQ Image

The DMTH6010LPDQ from Diodes Incorporated is a MOSFET with Continous Drain Current 13.1 to 47.6 A, Drain Source Resistance 8.5 to 16 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMTH6010LPDQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMTH6010LPDQ
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    13.1 to 47.6 A
  • Drain Source Resistance
    8.5 to 16 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    20.3 to 40.2 nC
  • Power Dissipation
    2.8 to 37.5 W
  • Temperature operating range
    -55 to 175 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Engine Management Systems, Body Control Electronics, DC-DC Converters

Technical Documents
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