ZVN3310A

Note : Your request will be directed to Diodes Incorporated.

ZVN3310A Image

The ZVN3310A from Diodes Incorporated is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 10000 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 2.4 V. Tags: Through Hole. More details for ZVN3310A can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZVN3310A
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, , N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    10000 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 2.4 V
  • Power Dissipation
    0.625 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    E-Line TO92

Technical Documents

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