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ZVN4525G

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The ZVN4525G from Diodes Incorporated is a MOSFET with Continous Drain Current 0.31 A, Drain Source Resistance 5600 to 9500 Milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -40 to 40 V, Gate Source Threshold Voltage 0.8 to 1.8 V. Tags: Surface Mount. More details for ZVN4525G can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZVN4525G
  • Manufacturer
    Diodes Incorporated
  • Description
    -40 to 40 V, 2.6 to 3.65 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.31 A
  • Drain Source Resistance
    5600 to 9500 Milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -40 to 40 V
  • Gate Source Threshold Voltage
    0.8 to 1.8 V
  • Gate Charge
    2.6 to 3.65 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT223
  • Applications
    Earth recall and dialing switches, Electronic hook switches, High voltage power MOSFET drivers, Telecom call routers, Solid state relays

Technical Documents
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