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ZVNL110G

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The ZVNL110G from Diodes Incorporated is a MOSFET with Continous Drain Current 0.6 A, Drain Source Resistance 3000 to 4500 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.75 to 1.5 V. Tags: Surface Mount. More details for ZVNL110G can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZVNL110G
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, , N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.6 A
  • Drain Source Resistance
    3000 to 4500 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.75 to 1.5 V
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT223
  • Applications
    DC-DC converters, Power management functions

Technical Documents
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