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ZXMHC10A07N8

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ZXMHC10A07N8 Image

The ZXMHC10A07N8 from Diodes Incorporated is a MOSFET with Continous Drain Current -0.85 to 1 A, Drain Source Resistance 0.7 to 1.45 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for ZXMHC10A07N8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMHC10A07N8
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, Dual, N/P Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.85 to 1 A
  • Drain Source Resistance
    0.7 to 1.45 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    2.9 to 3.5 nC
  • Power Dissipation
    0.87 to 1.36 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    SOIC
  • Applications
    DC Motor Control, DC-AC Inverters

Technical Documents
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