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ZXMHN6A07T8

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The ZXMHN6A07T8 from Diodes Incorporated is a MOSFET with Continous Drain Current 1.3 to 1.6 A, Drain Source Resistance 0.30 to 0.45 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Through Hole. More details for ZXMHN6A07T8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMHN6A07T8
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.3 to 1.6 A
  • Drain Source Resistance
    0.30 to 0.45 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    3.2 nC
  • Power Dissipation
    1.1 to 1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    SOT-223
  • Applications
    DC-AC Converters, Motor Control

Technical Documents
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