1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. ZXMN10A25K

ZXMN10A25K

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

ZXMN10A25K Image

The ZXMN10A25K from Diodes Incorporated is a MOSFET with Continous Drain Current 4.2 A, Drain Source Resistance 150 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for ZXMN10A25K can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ZXMN10A25K
  • Manufacturer
    Diodes Incorporated
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.2 A
  • Drain Source Resistance
    150 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    9.6 to 17.16 nC
  • Power Dissipation
    2.11 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)
  • Applications
    DC-DC Converters, Power Management Functions, Motor Control, Disconnect switches

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products