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ZXMN10B08E6

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ZXMN10B08E6 Image

The ZXMN10B08E6 from Diodes Incorporated is a MOSFET with Continous Drain Current 1.6 A, Drain Source Resistance 230 to 500 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for ZXMN10B08E6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMN10B08E6
  • Manufacturer
    Diodes Incorporated
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.6 A
  • Drain Source Resistance
    230 to 500 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    5 to 9.2 nC
  • Power Dissipation
    1.1 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT26
  • Applications
    DC-DC Converters, Power Management Functions, Motor Control, Disconnect switches

Technical Documents
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