ZXMN20B28K

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ZXMN20B28K Image

The ZXMN20B28K from Diodes Incorporated is a MOSFET with Continous Drain Current 1.5 A, Drain Source Resistance 650 to 780 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for ZXMN20B28K can be seen below.

Product Specifications

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Product Details

  • Part Number
    ZXMN20B28K
  • Manufacturer
    Diodes Incorporated
  • Description
    200 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.5 A
  • Drain Source Resistance
    650 to 780 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    8.1 nC
  • Power Dissipation
    10.2 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)
  • Applications
    SLIC line drivers for VoIP applications, Transformer Driving Switch, Power management functions, Motor control, Uninterrupted power supply

Technical Documents

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