1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. ZXMN2A14F

ZXMN2A14F

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

ZXMN2A14F Image

The ZXMN2A14F from Diodes Incorporated is a MOSFET with Continous Drain Current 4.1 A, Drain Source Resistance 110 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.7 V. Tags: Surface Mount. More details for ZXMN2A14F can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ZXMN2A14F
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.1 A
  • Drain Source Resistance
    110 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.7 V
  • Gate Charge
    6.6 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    DC - DC Converters, Power Management Functions, Disconnect switches, Motor control

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products